Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 5.3 A | 500 mOhms | - 20 V, 20 V | 4 V | 9.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 40 V | 110 A | 5 mOhms | - 20 V, 20 V | 2 V | 185 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH 400V HEXFET MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | - 20 V, 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIJ188DP-T1-GE3 TTI: SIJ188DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds; 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 60 V | 92.4 A | 3.85 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA06DP-GE3 | ||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 33 mOhms | - 8 V, 8 V | 400 mV | 18 nC | - 55 C | + 150 C | 17.9 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA461DJ-GE3 | ||||
Mfr: SUD80460E-GE3 TTI: SUD80460E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 150V Vds 42A Id 10.5nC Qg Typ. | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 42 A | 37.2 mOhms | - 20 V, 20 V | 4 V | 25 nC | - 55 C | + 175 C | 65.2 W | Enhancement | Reel | SUD80460E-BE3 | ||||
Mfr: SUM50020E-GE3 TTI: SUM50020E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds TrenchFET TO-263-3 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 120 A | 2.4 mOhms | - 20 V, 20 V | 3 V | 128 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA923AEDJ-T1-GE3 TTI: SIA923AEDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V .054ohm@-4.5V -4.5A P-CH | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms | - 8 V, 8 V | 900 mV | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7655DN-T1-GE3 TTI: SI7655DN-T1-GE3 Vishay Semiconductors MOSFETs -20V 3.6mOhm@10V 40A P-Ch G-III | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 40 A | 3 mOhms | - 12 V, 12 V | 1.1 V | 225 nC | - 50 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | SI7655DN-GE3 | |||
Mfr: SIJH5700E-T1-GE3 TTI: SIJH5700E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs PWRPK 150V 174A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | - 20 V, 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 4.8 mOhms | - 20 V, 20 V | 1 V | 93 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | SIDR170DP | |||||
Mfr: SIUD406ED-T1-GE3 TTI: SIUD406ED-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds; 8V Vgs PowerPAK 0806 | 0In Stock | Si | SMD/SMT | PowerPAK-0806-3 | N-Channel | 1 Channel | 30 V | 500 mA | 1.46 Ohms | - 8 V, 8 V | 400 mV | 600 pC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 40 A | 3.25 mOhms | - 16 V, 20 V | 1.1 V | 93 nC | - 55 C | + 150 C | 46.2 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIR616DP-T1-GE3 TTI: SIR616DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 20.2 A | 42 mOhms | - 20 V, 20 V | 2 V | 36 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 960 uOhms | - 16 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 54.3 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SI1078X-T1-GE3 TTI: SI1078X-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs SC89-6 | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 1 Channel | 30 V | 1.02 A | 142 mOhms | - 12 V, 12 V | 600 mV | 6 nC | - 55 C | + 150 C | 240 mW | Enhancement | Reel | |||||
Mfr: SUP50020EL-GE3 TTI: SUP50020EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 120 A | 2.3 mOhms | - 20 V, 20 V | 1.2 V | 126 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA923EDJ-T1-GE3 TTI: SIA923EDJ-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms, 44 mOhms | - 8 V, 8 V | 1.4 V | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA923EDJ-GE3 | |||
Mfr: SISS22DN-T1-GE3 TTI: SISS22DN-T1-GE3 Vishay Semiconductors MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 60 V | 90.6 A | 4 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA445EDJ-T1-GE3 TTI: SIA445EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 16.5 mOhms | - 12 V, 12 V | 1.2 V | 48 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA445EDJ-GE3 | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 20 A | 180 mOhms | - 20 V, 20 V | 2 V | 70 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 250 V | 4.1 A | 1 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | ||||||
Mfr: IRFI9620GPBF TTI: IRFI9620GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 200V 3A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 3 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel |
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