Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIRC18DP-T1-GE3 TTI: SIRC18DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 850 uOhms | - 16 V, 20 V | 1 V | 111 nC | - 55 C | + 150 C | 54.3 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISA01DN-T1-GE3 TTI: SISA01DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 16V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.9 mOhms | - 20 V, 16 V | 2.2 V | 56 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR690DP-T1-RE3 TTI: SIR690DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 34.4 A | 28.5 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 60 V | 165 A | 1.75 mOhms | - 20 V, 20 V | 3.5 V | 55 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 16 A | 68 mOhms | - 30 V, 30 V | 5 V | 51 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||||
Mfr: SI2319CDS-T1-BE3 TTI: SI2319CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CHANNEL 40V (D-S | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF840APBF | |||||
Mfr: IRF9Z30PBF-BE3 TTI: IRF9Z30PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 P CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 39 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | IRF9Z30PBF | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | IRFBG20PBF | |||||
Mfr: SIA427DJ-T1-GE3 TTI: SIA427DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 8V 12A 19W 13mohms @ 4.5V | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 8 V | 12 A | 95 mOhms | - 5 V, 5 V | 800 mV | 50 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | SIA427DJ-GE3 | |||
Mfr: SIZF906BDT-T1-GE3 TTI: SIZF906BDT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PWRPR N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5F-8 | N-Channel | 2 Channel | 30 V | 105 A, 257 A | 680 uOhms, 2.1 mOhms | - 16 V, 20 V | 2.2 V | 25 nC, 81 nC | - 55 C | + 150 C | 38 W, 83 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | Reel | SI2302DDS-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 80 V | 146 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 76 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | - 30 V, 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | SIHP6N80E-GE3 | |||||
Mfr: SI2387DS-T1-GE3 TTI: SI2387DS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 P CHAN 80V | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 80 V | 3 A | 242 mOhms | - 20 V, 20 V | 2.5 V | 10.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR420TRPBF-BE3 TTI: IRFR420TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 500V 2.4A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR420TRPBF | ||||
0In Stock | Si | SMD/SMT | PowerPak-9 | N-Channel | 1 Channel | 600 V | 48 A | 49 mOhms | - 30 V, 30 V | 5 V | 65 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
Mfr: SIR5712DP-T1-GE3 TTI: SIR5712DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK SO-8 | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 18 A | 55.5 mOhms | - 20 V, 20 V | 4 V | 7.5 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | |||||
Mfr: SISD5300DN-T1-GE3 TTI: SISD5300DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAK 1212-F-8 | N-Channel | 1 Channel | 30 V | 198 A | 870 uOhms | - 12 V, 16 V | 2 V | 27 nC | - 55 C | + 150 C | 57 W | Enhancement | Reel | |||||
Mfr: SIS4406DN-T1-GE3 TTI: SIS4406DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds +20, -16V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8S | N-Channel | 1 Channel | 40 V | 62.8 A | 4.75 mOhms | - 16 V, 20 V | 2.4 V | 23.7 nC | - 55 C | + 150 C | 33.7 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 24.7 A | 25.5 mOhms | - 20 V, 20 V | 2.5 V | 19.2 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 17 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRF710PBF | |||||
Mfr: SI2323CDS-T1-BE3 TTI: SI2323CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 P CHAN 20V | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 39 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2323CDS-T1-GE3 | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 8 V | 6 A | 17 mOhms | - 5 V, 5 V | 800 mV | 6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2342DS-T1-GE3 |
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