Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 18 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Reel | ||||||
Mfr: IRFR120TRLPBF TTI: IRFR120TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 7.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR120TRLPBF-BE3 | ||||
Mfr: IRF530STRRPBF TTI: IRF530STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 14A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
Mfr: SI7106DN-T1-GE3 TTI: SI7106DN-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | - 12 V, 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | - 25 V, 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-GE3 | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 5.3 A | 80 mOhms | - 20 V, 20 V | 4.5 V | 42 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7450DP-GE3 | ||||
Mfr: SI3483CDV-T1-GE3 TTI: SI3483CDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 34 mOhms | - 20 V, 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3483CDV-T1-BE3 SI3483CDV-GE3 | |||
Mfr: SI7998DP-T1-GE3 TTI: SI7998DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 25 A, 30 A | 5.3 mOhms, 9.3 mOhms | - 20 V, 20 V | 2.5 V | 17 nC, 32 nC | - 55 C | + 150 C | 22 W, 40 W | Enhancement | TrenchFET | Reel | SI7998DP-GE3 | |||
Mfr: SI7272DP-T1-GE3 TTI: SI7272DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 25 A | 9.3 mOhms | - 20 V, 20 V | 1.2 V | 17 nC | - 55 C | + 150 C | 22 W | Enhancement | TrenchFET | Reel | SI7272DP-GE3 | |||
Mfr: SI4490DY-T1-E3 TTI: SI4490DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SI44 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 4 A | 80 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4490DY-E3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 9.5 A | 16.5 mOhms | - 20 V, 20 V | 2 V | 41 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4896DY-E3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 50 A | 2.3 mOhms | - 12 V, 12 V | 600 mV | 133 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR800DP-GE3 | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | - 10 V, 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-BE3 SI1401EDH-GE3 | ||||
Mfr: SIHFR220TRL-GE3 TTI: SIHFR220TRL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs MOSFET N-CHANNEL 200V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | Reel | |||||||||||||||||
Mfr: SI4154DY-T1-GE3 TTI: SI4154DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 36 A | 3.3 mOhms | - 20 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4154DY-GE3 | |||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | - 20 V, 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.7 A | 9.8 mOhms | - 20 V, 20 V | 1.2 V | 53 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4425DDY-GE3 | ||||
Mfr: SIA929DJ-T1-GE3 TTI: SIA929DJ-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 52 mOhms, 52 mOhms | - 12 V, 12 V | 1.1 V | 21 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA929DJ-GE3 | |||
Mfr: SI4090DY-T1-GE3 TTI: SI4090DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 19.7 A | 8 mOhms | - 20 V, 20 V | 2 V | 69 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4090DY-GE3 | |||
Mfr: SIR401DP-T1-GE3 TTI: SIR401DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 50 A | 2.5 mOhms | - 12 V, 12 V | 1.5 V | 310 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR401DP-GE3 | |||
Mfr: SIHW33N60E-GE3 TTI: SIHW33N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AD | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | - 30 V, 30 V | 4 V | 100 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SIR826ADP-T1-GE3 TTI: SIR826ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.6 mOhms | - 20 V, 20 V | 1.2 V | 86 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 64 mOhms | - 30 V, 30 V | 4 V | 148 nC | - 55 C | + 150 C | 357 W | Enhancement | Reel |