Vishay - MOSFETs
8,352 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-BE3 SI1401EDH-GE3 | ||||
Mfr: SIHFR220TRL-GE3 TTI: SIHFR220TRL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs MOSFET N-CHANNEL 200V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | Reel | |||||||||||||||||
Mfr: SIR846ADP-T1-GE3 TTI: SIR846ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 6.5 mOhms | 20 V | 1.8 V | 66 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR846ADP-GE3 | |||
Mfr: SIA929DJ-T1-GE3 TTI: SIA929DJ-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 52 mOhms, 52 mOhms | 12 V | 1.1 V | 21 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA929DJ-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 64 mOhms | 30 V | 4 V | 148 nC | - 55 C | + 150 C | 357 W | Enhancement | Reel | ||||||
Mfr: SIR401DP-T1-GE3 TTI: SIR401DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 50 A | 2.5 mOhms | 12 V | 1.5 V | 310 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR401DP-GE3 | |||
Mfr: SISA12ADN-T1-GE3 TTI: SISA12ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs For New Design See: 78-SISHA12ADN-T1-GE3 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 25 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 28 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIS447DN-T1-GE3 TTI: SIS447DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 12.5 mOhms | 12 V | 1.2 V | 181 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 50 A | 8.9 mOhms | 20 V | 4 V | 50 nC | - 55 C | + 175 C | 125 W | Enhancement | ThunderFET | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 14.5 A | 243 mOhms | 30 V | 4 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | SIHP15N50E-BE3 | |||||
Mfr: SIA485DJ-T1-GE3 TTI: SIA485DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 150 V | 1.6 A | 2.7 Ohms | 20 V | 4.5 V | 6.3 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR826ADP-T1-GE3 TTI: SIR826ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.6 mOhms | 20 V | 1.2 V | 86 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | ||||||
Mfr: SIS415DNT-T1-GE3 TTI: SIS415DNT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.3 mOhms | 12 V | 1.5 V | 180 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2371EDS-T1-GE3 TTI: SI2371EDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2371EDS-T1-BE3 | |||
Mfr: SI4062DY-T1-GE3 TTI: SI4062DY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 32.1 A | 4.2 mOhms | 20 V | 1.4 V | 40 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR472ADP-T1-GE3 TTI: SIR472ADP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 18 A | 9 mOhms | 20 V | 1.1 V | 28 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | ||||||
Mfr: SI5418DU-T1-GE3 TTI: SI5418DU-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 12 A | 14.5 mOhms | 20 V | 1.2 V | 30 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | SI5418DU-GE3 | |||
Mfr: SUM110N10-09-E3 TTI: SUM110N10-09-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V 110A 375W | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 110 A | 9.5 mOhms | 20 V | 2 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | SIHG11N80AE | |||||
Mfr: SIZ260DT-T1-GE3 TTI: SIZ260DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs DUAL N-CHANNEL 80-V PowerPAIR 3 x 3S | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 80 V | 24.6 A, 24.7 A | 24.5 mOhms, 24.7 mOhms | 20 V | 1.1 V | 13.1 nC, 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIS888DN-T1-GE3 TTI: SIS888DN-T1-GE3 Vishay Semiconductors MOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 150 V | 20.2 A | 58 mOhms | 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 52 W | Enhancement | ThunderFET | Reel | ||||
Mfr: SIR403EDP-T1-GE3 TTI: SIR403EDP-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 40 A | 11.5 mOhms | 25 V | 2.8 V | 153 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHW33N60E-GE3 TTI: SIHW33N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AD | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | 30 V | 4 V | 100 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel |