Vishay - MOSFETs
8,394 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI1539CDL-T1-GE3 TTI: SI1539CDL-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs SC70-6 N&P PAIR | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 700 mA | 388 mOhms, 890 mOhms | 20 V | 2.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1539CDL-T1-BE3 SI1539CDL-GE3 | |||
Mfr: IRF9510SPBF TTI: IRF9510SPBF Vishay Semiconductors Availability: 200In Stock3,000 On Order Expected 16-Sep-27 MOSFETs P-Chan 100V 4.0 Amp | 200In Stock3,000 On Order Expected 16-Sep-27 | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 4 A | 1.2 Ohms | 20 V | 4 V | 8.7 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | |||||
Mfr: SISS27ADN-T1-GE3 TTI: SISS27ADN-T1-GE3 Vishay Semiconductors Availability: 36,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8S | 36,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 50 A | 4.2 mOhms | 20 V | 2.2 V | 117 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2318CDS-T1-GE3 TTI: SI2318CDS-T1-GE3 Vishay Semiconductors Availability: 21,000In Stock90,000 On Order Expected 24-Jun-30 MOSFETs 40V Vds 20V Vgs SOT-23 | 21,000In Stock90,000 On Order Expected 24-Jun-30 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2318CDS-T1-BE3 SI2318CDS-GE3 | |||
Mfr: SI2374DS-T1-GE3 TTI: SI2374DS-T1-GE3 Vishay Semiconductors Availability: 12,000In Stock60,000 On Order Expected 29-Apr-27 MOSFETs 20V Vds 8V Vgs SOT-23 | 12,000In Stock60,000 On Order Expected 29-Apr-27 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2374DS-T1-BE3 | |||
12,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 50 V | 15 A | 100 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | IRFZ20PBF-BE3 | |||||
Mfr: IRL640SPBF TTI: IRL640SPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs N-Chan 200V 17 Amp | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRFP450LCPBF TTI: IRFP450LCPBF Vishay Semiconductors Availability: 500In StockMOSFETs 500V N-CH HEXFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 30 V | 2 V | 74 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIR878BDP-T1-RE3 TTI: SIR878BDP-T1-RE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 42.5 A | 12 mOhms | 20 V | 2 V | 24.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISA88DN-T1-GE3 TTI: SISA88DN-T1-GE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40.5 A | 6.7 mOhms | - 16 V, 20 V | 1.1 V | 12.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI8802DB-T2-E1 TTI: SI8802DB-T2-E1 Vishay / Siliconix Availability: 129,000In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 | 129,000In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 3.5 A | 54 mOhms | 5 V | 350 mV | 4.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR836DP-T1-GE3 TTI: SIR836DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 21 A | 19 mOhms | 20 V | 1.2 V | 11.8 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR836DP-GE3 | |||
Mfr: SI5936DU-T1-GE3 TTI: SI5936DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 2 Channel | 30 V | 6 A | 30 mOhms | 20 V | 1.2 V | 11 nC | - 55 C | + 150 C | 10.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR9214TRPBF TTI: IRFR9214TRPBF Vishay Semiconductors Availability: 6,000In StockMOSFETs TO252 250V 2.7A P-CH MOSFET | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: IRFR1N60ATRPBF TTI: IRFR1N60ATRPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs N-Chan 600V 1.4 Amp | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF-BE3 | ||||
Mfr: IRFR420TRPBF TTI: IRFR420TRPBF Vishay Semiconductors Availability: 18,000In StockMOSFETs N-CH 500V HEXFET MOSFET D-PAK | 18,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 4 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR420TRPBF-BE3 | ||||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3 Vishay Semiconductors Availability: 52,500In StockMOSFETs -60V Vds 20V Vgs SO-8 | 52,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | |||
Mfr: SI4804CDY-T1-GE3 TTI: SI4804CDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V 8.0A 3.1W 22mohm @ 10V | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8 A | 22 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4804CDY-GE3 | |||
Mfr: SI6562CDQ-T1-GE3 TTI: SI6562CDQ-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR | 15,000In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 22 mOhms, 30 mOhms | 8 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | TrenchFET | Reel | SI6562CDQ-GE3 | |||
Mfr: SI4101DY-T1-GE3 TTI: SI4101DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 25.7 A | 5 mOhms | 20 V | 2.5 V | 203 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 16,000In StockMOSFETs RECOMMENDED ALT SUD1 | 16,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 50,000In StockMOSFETs -40V Vds 20V Vgs SO-8 | 50,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: SIHD240N60E-GE3 TTI: SIHD240N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 600V Vds; +/-30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | 30 V | 3 V | 23 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: IRF510SPBF TTI: IRF510SPBF Vishay Semiconductors Availability: 3,000In StockMOSFETs N-Chan 100V 5.6 Amp | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: SI3421DV-T1-GE3 TTI: SI3421DV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 19.2 mOhms | 20 V | 1 V | 46 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel |