In Stock - MOSFETs
136 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: RQ6P015SPTR TTI: RQ6P015SPTR ROHM Semiconductor Availability: 3,000In StockMOSFETs SOT457 100V 1.5A P-CH MOSFET | 3,000In Stock | Si | SMD/SMT | SOT-457-6 | P-Channel | 1 Channel | 100 V | 1.5 A | 470 mOhms | - 20 V, 20 V | 2.5 V | 32 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6P015SP | ||||
Mfr: IRFBE30PBF TTI: IRFBE30PBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 800V 4.1A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBE30PBF-BE3 | ||||
Mfr: SI5457DC-T1-GE3 TTI: SI5457DC-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 12V Vgs 1206-8 ChipFET | 6,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 6 A | 56 mOhms | - 12 V, 12 V | 1.4 V | 38 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5457DC-GE3 | |||
Mfr: IRFP254PBF TTI: IRFP254PBF Vishay Semiconductors Availability: 500In StockMOSFETs N-CH 250V HEXFET MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 23 A | 140 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRFR310TRPBF TTI: IRFR310TRPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs N-Chan 400V 1.7 Amp | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR310TRPBF-BE3 | ||||
Mfr: SI7137DP-T1-GE3 TTI: SI7137DP-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 24,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.95 mOhms | - 12 V, 12 V | 1.4 V | 390 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7137DP-GE3 | |||
Mfr: SIA436DJ-T1-GE3 TTI: SIA436DJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 8V Vds 5V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 8 V | 12 A | 9.4 mOhms | - 5 V, 5 V | 350 mV | 15 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA436DJ-GE3 | |||
Mfr: SIS110DN-T1-GE3 TTI: SIS110DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 14.2 A | 54 mOhms | - 20 V, 20 V | 2 V | 13 nC | - 55 C | + 150 C | 24 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIS476DN-T1-GE3 TTI: SIS476DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1 V | 77 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS476DN-GE3 | |||
Mfr: SIR662DP-T1-GE3 TTI: SIR662DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 60V 2.7mOhm@10V 60A N-Ch MV T-FET | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 100 A | 2.2 mOhms | - 20 V, 20 V | 1 V | 96 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR662DP-GE3 | |||
Mfr: SI2392ADS-T1-GE3 TTI: SI2392ADS-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 102 mOhms | - 20 V, 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2392ADS-T1-BE3 | |||
Mfr: IRFBE30LPBF TTI: IRFBE30LPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-Chan 800V 4.1 Amp | 1,000In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI3457CDV-T1-GE3 TTI: SI3457CDV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 5.1 A | 74 mOhms | - 20 V, 20 V | 3 V | 15 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI3457CDV-T1-BE3 SI3457BDV-T1-E3-S | |||
Mfr: SUP57N20-33-E3 TTI: SUP57N20-33-E3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 200V 57A 300W | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 57 A | 27 mOhms | - 20 V, 20 V | 2 V | 130 nC | - 55 C | + 175 C | 300 W | Enhancement | TrenchFET | Tube | ||||
Mfr: IXFT150N30X3HV TTI: IXFT150N30X3HV IXYS Availability: 60In StockMOSFETs MSFT N-CH ULTRA JNCT X3 3&44 | 60In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | - 20 V, 20 V | 4.5 V | 177 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IRF840APBF TTI: IRF840APBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 500V 8A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840APBF-BE3 | ||||
Mfr: IRF740STRLPBF TTI: IRF740STRLPBF Vishay Semiconductors Availability: 19,200In StockMOSFETs N-CH 400V MOSFET MOSFET D2-PA | 19,200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI1469DH-T1-E3 TTI: SI1469DH-T1-E3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -20V Vds 12V Vgs SC70-6 | 15,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | - 12 V, 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI1469DH-T1-BE3 SI1469DH-E3 | |||
Mfr: SIA975DJ-T1-GE3 TTI: SIA975DJ-T1-GE3 Vishay Semiconductors Availability: 66,000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 66,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 33 mOhms, 33 mOhms | - 8 V, 8 V | 1 V | 26 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA975DJ-GE3 | |||
Mfr: IRF9610PBF TTI: IRF9610PBF Vishay Semiconductors Availability: 350In StockMOSFETs P-CH -200V HEXFET MOSFET | 350In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | IRF9610PBF-BE3 | ||||
Mfr: IRFPG50PBF TTI: IRFPG50PBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-CH 1000V HEXFET MOSFET | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6.1 A | 2 Ohms | - 20 V, 20 V | 2 V | 190 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIRS5800DP-T1-GE3 TTI: SIRS5800DP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs N-Channel 80 V (D-S) MOSFET | 6,000In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 80 V | 265 A | 1.8 mOhms | - 20 V, 20 V | 4 V | 81 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | |||||
Mfr: IRFP9140PBF TTI: IRFP9140PBF Vishay Semiconductors Availability: 500In StockMOSFETs TO247 100V 21A P-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 21 A | 200 mOhms | - 20 V, 20 V | 2 V | 61 nC | - 55 C | + 175 C | 180 W | Enhancement | Tube | |||||
Mfr: SISS98DN-T1-GE3 TTI: SISS98DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8S | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 14.1 A | 85 mOhms | - 20 V, 20 V | 2 V | 18.2 nC | - 55 C | + 150 C | 57 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SI7119DN-T1-GE3 TTI: SI7119DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | - 20 V, 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-GE3 |