GaN FETs
17 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | ROHM Semiconductor | SMD/SMT | DFN8080CK-8 | N-Channel | 1 Channel | 650 V | 27.2 A | 98 mOhms | - 10 V, + 6.5 V | 2.5 V | 4.7 nC | - 55 C | + 150 C | 169 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | VQFN-46 | 1 Channel | 650 V | 12.2 A | 195 mOhms | - 40 C | + 105 C | Enhancement | Nano Cap; EcoGaN | ||||||||||
0In Stock | ROHM Semiconductor | SMD/SMT | DFN8080CK-8 | N-Channel | 1 Channel | 650 V | 14.5 A | 182 mOhms | - 10 V, + 6.5 V | 2.5 V | 2.8 nC | - 55 C | + 150 C | 91 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | VQFN-46 | 1 Channel | 650 V | 68.8 A | 70 mOhms | - 40 C | + 105 C | Enhancement | Nano Cap; EcoGaN | ||||||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TOLL-8N | N-Channel | 1 Channel | 650 V | 27 A | 98 mOhms | - 10 V to + 6.5 V | 1.5 V | 5.2 nC | - 55 C | + 150 C | 159 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | DFN-8 | N-Channel | 1 Channel | 650 V | 33.8 A | 70 mOhms | - 10 V, 6.5 V | 2.5 V | 6.4 nC | - 55 C | + 150 C | 187 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | VQFN-46 | 1 Channel | 650 V | 17.9 A | 100 mOhms | - 40 C | + 105 C | Enhancement | Nano Cap; EcoGaN | ||||||||||
Mfr: PGA26E07BA TTI: Not Assigned Panasonic Availability: Not Available OnlineGaN FETs MOSFET 600VDC 70mohm X-GaN | Not Available Online | Panasonic | SMD/SMT | DFN-8 | 1 Channel | 600 V | 26 A | 70 mOhms | 5 nC | - 55 C | + 150 C | 96 W | X-GaN | PGA26E07BA2 | |||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DFN-8 | N-Channel | 1 Channel | 150 V | 30 A | 8.5 mOhms | - 2 V to 8 V | 1 V | 7 nC | + 150 C | Enhancement | ||||||||
Not Available Online | Panasonic | ||||||||||||||||||||
Mfr: PGA26E19BA TTI: Not Assigned Panasonic Availability: Not Available OnlineGaN FETs MOSFET 600VDC 190mohm X-GaN | Not Available Online | Panasonic | SMD/SMT | DFN-8 | N-Channel | 1 Channel | 600 V | 19 A | 140 mOhms | 1.2 V | 2 nC | - 55 C | + 150 C | 83 W | Enhancement | X-GaN | PGA26E19BA2 | ||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DFN-8 | N-Channel | 1 Channel | 150 V | 10 A | 40 mOhms | - 2 V to 8 V | 1 V | 2 nC | + 150 C | Enhancement | ||||||||
Mfr: GNP2025TD-ZTR TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineGaN FETs EcoGaN, 650V 59.8A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT | Not Available Online | ROHM Semiconductor | SMD/SMT | TOLL-8N | N-Channel | 1 Channel | 650 V | 59.8 A | 35 mOhms | - 10 V, + 6.5 V | 2.5 V | 13.2 nC | - 55 C | + 150 C | 291 W | Enhancement | |||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DFN-8 | N-Channel | 1 Channel | 650 V | 20 A | 98 mOhms | - 10 V, + 6 V | 1.45 V | 5.2 nC | + 150 C | 56 W | Enhancement | EcoGan | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DFN-8080AK-8 | N-Channel | 1 Channel | 650 V | 11 A | 195 mOhms | - 10 V, + 6 V | 1.45 V | 2.7 nC | + 150 C | 46.3 W | Enhancement | EcoGan | ||||||
Mfr: GNP2050TD-ZTR TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineGaN FETs EcoGaN, 650V 31.5A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT | Not Available Online | ROHM Semiconductor | SMD/SMT | TOLL-8N | N-Channel | 1 Channel | 650 V | 31.5 A | 70 mOhms | - 10 V, + 6.5 V | 2.5 V | 6.4 nC | - 55 C | + 150 C | 159 W | Enhancement | |||||
Not Available Online | Panasonic |
