Vishay Semiconductors - MOSFETs
2,238 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI2309CDS-T1-E3 TTI: SI2309CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | - 20 V, 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2309CDS-T1-BE3 SI2309CDS-E3 | |||
0In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | - 8 V, 8 V | 1 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-E3 | ||||
Mfr: SIS438DN-T1-GE3 TTI: SIS438DN-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 16 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 23 nC | - 55 C | + 150 C | 27.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS438DN-GE3 | |||
Mfr: SI4848DY-T1-GE3 TTI: SI4848DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-GE3 | |||
Mfr: SI5515CDC-T1-E3 TTI: SI5515CDC-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 36 mOhms, 100 mOhms | - 8 V, 8 V | 400 mV | 11.3 nC, 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5515CDC-E3 | |||
0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 61 mOhms | - 8 V, 8 V | 400 mV | 15 nC, 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA517DJ-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 4 A | 58 mOhms | - 12 V, 12 V | 600 mV | 17 nC | - 50 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9933CDY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 27.2 A | 4.5 mOhms | - 25 V, 25 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4122DY-GE3 | ||||
Mfr: SI7884BDP-T1-GE3 TTI: SI7884BDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 58A 46W 7.5mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 58 A | 7.5 mOhms | - 20 V, 20 V | 3 V | 51 nC | - 55 C | + 155 C | 46 W | Enhancement | TrenchFET | Reel | SI7884BDP-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | - 20 V, 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 25.4 A | 4.9 mOhms | - 20 V, 20 V | 1 V | 54 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4160DY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 5 A | 50 mOhms | - 20 V, 20 V | 2 V | 36 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4488DY-GE3 | ||||
Mfr: IRFP250PBF TTI: IRFP250PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO247 200V 30A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 14 mOhms | - 20 V, 20 V | 2 V | 160 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | ||||||
Mfr: IRFU9120PBF TTI: IRFU9120PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 5.6 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRF9Z14SPBF TTI: IRF9Z14SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 P CHAN 60V | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | - 20 V, 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 2 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: IRFBC30ALPBF TTI: IRFBC30ALPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO262 | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | - 30 V, 30 V | 2 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | ||||||
Mfr: IRFU110PBF TTI: IRFU110PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO251 100V 4.3A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: IRFU220PBF TTI: IRFU220PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO251 200V 4.8A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 39 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | IRF9Z30PBF-BE3 | |||||
Mfr: IRFZ48RSPBF TTI: IRFZ48RSPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 50 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 18 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Reel |
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