Vishay Semiconductors - MOSFETs
2,238 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | ||||||
Mfr: SI7997DP-T1-GE3 TTI: SI7997DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 30 V | 60 A | 5.5 mOhms | - 20 V, 20 V | 2.2 V | 106 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7997DP-GE3 | |||
Mfr: SI7288DP-T1-GE3 TTI: SI7288DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 20 A | 19 mOhms | - 20 V, 20 V | 1.2 V | 15 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | SI7288DP-GE3 | |||
Mfr: SI2303CDS-T1-E3 TTI: SI2303CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 1 V | 4 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303CDS-E3 | |||
Mfr: SI7119DN-T1-E3 TTI: SI7119DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | - 20 V, 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-E3 | |||
Mfr: SI7232DN-T1-GE3 TTI: SI7232DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 20 V | 25 A | 16.4 mOhms | - 8 V, 8 V | 400 mV | 32 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET | Reel | SI7232DN-GE3 | |||
Mfr: SI2369BDS-T1-BE3 TTI: SI2369BDS-T1-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V P-CHANNEL (D-S) | 0In Stock | Reel | ||||||||||||||||||||
Mfr: IRL640STRRPBF TTI: IRL640STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 17 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | - 10 V, 10 V | 1 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SIZ340DT-T1-GE3 TTI: SIZ340DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 30 A, 40 A | 9.5 mOhms, 5.1 mOhms | - 16 V, 20 V | 1 V | 19 nC, 35 nC | - 55 C | + 150 C | 16.7 W, 31 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 3.9 mOhms | - 20 V, 20 V | 3 V | 167 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7135DP-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-GE3 | ||||
Mfr: SIR826DP-T1-GE3 TTI: SIR826DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V 4.8mOhm@10V 60A N-Ch MV T-FET | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.8 mOhms | - 20 V, 20 V | 1.2 V | 60 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR826DP-GE3 | |||
Mfr: SI6562CDQ-T1-GE3 TTI: SI6562CDQ-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR | 0In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 22 mOhms, 30 mOhms | - 8 V, 8 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | TrenchFET | Reel | SI6562CDQ-GE3 | |||
Mfr: SIA921EDJ-T1-GE3 TTI: SIA921EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 48 mOhms, 48 mOhms | - 12 V, 12 V | 1.4 V | 23 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA921EDJ-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 11 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 175 C | 2.5 W | Enhancement | Reel | IRF9Z24PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 60 V | 2.9 A | 216 mOhms | - 20 V, 20 V | 3 V | 7.7 nC | - 55 C | + 150 C | 3.3 W | Enhancement | TrenchFET | Reel | SI3459BDV-T1-BE3 SI3459BDV-GE3 | ||||
Mfr: SI2307CDS-T1-GE3 TTI: SI2307CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | - 20 V, 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-BE3 SI2307CDS-GE3 | |||
Mfr: IRFR9310TRPBF TTI: IRFR9310TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 400V 1.8 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | - 20 V, 20 V | 2 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: SIS407ADN-T1-GE3 TTI: SIS407ADN-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 9 mOhms | - 8 V, 8 V | 400 mV | 112 nC | - 55 C | + 150 C | 39.1 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRF9630STRLPBF TTI: IRF9630STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH -200V HEXFET MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 19 A | 60 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | - 20 V, 20 V | 3 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-GE3 | ||||
Mfr: SIA441DJ-T1-GE3 TTI: SIA441DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 40 V | 12 A | 47 mOhms | - 10 V, 10 V | 1.2 V | 22 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA441DJ-GE3 | |||
Mfr: SI7850DP-T1-GE3 TTI: SI7850DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 6.2 A | 22 Ohms | - 20 V, 20 V | 3 V | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7850DP-GE3 |
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