Vishay Semiconductors - MOSFETs
2,238 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IRLR024TRPBF TTI: IRLR024TRPBF Vishay Semiconductors Availability: 8,000In StockMOSFETs RECOMMENDED ALT IRLR | 8,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | - 10 V, 10 V | 1 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFIB5N65APBF TTI: IRFIB5N65APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-CH 650V HEXFET MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 5.1 A | 930 mOhms | - 30 V, 30 V | 2 V | 48 nC | - 55 C | + 150 C | 60 W | Enhancement | Tube | |||||
Mfr: SI7900AEDN-T1-GE3 TTI: SI7900AEDN-T1-GE3 Vishay Semiconductors Availability: 294,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 294,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 20 V | 8.5 A | 26 mOhms | - 12 V, 12 V | 900 mV | 10.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI7900AEDN-GE3 | |||
Mfr: SI7904BDN-T1-E3 TTI: SI7904BDN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 20 V | 6 A | 30 mOhms | - 8 V, 8 V | 1 V | 16 nC | - 55 C | + 150 C | 17.8 W | Enhancement | TrenchFET | Reel | SI7904BDN-E3 | |||
Mfr: SI4559ADY-T1-E3 TTI: SI4559ADY-T1-E3 Vishay Semiconductors Availability: 7,500In StockMOSFETs -60V Vds 20V Vgs SO-8 N&P PAIR | 7,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 60 V | 3.9 A, 5.3 A | 58 mOhms, 120 mOhms | - 20 V, 20 V | 1 V | 20 nC, 22 nC | - 55 C | + 150 C | 3.1 W, 3.4 W | Enhancement | TrenchFET | Reel | SI4559ADY-E3 | |||
Mfr: SI2319DS-T1-E3 TTI: SI2319DS-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 40V 3.0A 1.25W 82 mohms @ 10V | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 3 A | 82 mOhms | - 20 V, 20 V | 1 V | 17 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI2319DS-T1-BE3 SI2319DS-E3 | |||
Mfr: SI2304DDS-T1-GE3 TTI: SI2304DDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock12,000 On Order Expected 07-May-27 MOSFETs 30V Vds 20V Vgs SOT-23 | 0In Stock12,000 On Order Expected 07-May-27 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 60 mOhms | - 20 V, 20 V | 1.2 V | 6.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2304DDS-T1-BE3 SI2304DDS-GE3 | |||
Mfr: SISB46DN-T1-GE3 TTI: SISB46DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 34 A | 11.71 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2319CDS-T1-GE3 TTI: SI2319CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-BE3 SI2319CDS-GE3 | |||
Mfr: SI2323DDS-T1-GE3 TTI: SI2323DDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.3 A | 39 mOhms | - 8 V, 8 V | 1 V | 13.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2323DDS-T1-BE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 2.6 mOhms | - 20 V, 20 V | 2.3 V | 275 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7145DP-GE3 | ||||
Mfr: SUD50P10-43L-E3 TTI: SUD50P10-43L-E3 Vishay Semiconductors Availability: 0In Stock2,000 On Order Expected 07-May-27 MOSFETs 100V 37A 136W 43mohm @ 10V | 0In Stock2,000 On Order Expected 07-May-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 37.1 A | 43 mOhms | - 20 V, 20 V | 1 V | 106 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P10-43L-BE3 | |||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | - 16 V, 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-E3 | ||||
Mfr: SI1016CX-T1-GE3 TTI: SI1016CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC89-6 N&P PAIR | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel, P-Channel | 2 Channel | 20 V | 350 mA, 500 mA | 396 mOhms, 756 mOhms | - 8 V, 8 V | 400 mV | 1.3 nC, 1.65 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2369DS-T1-GE3 TTI: SI2369DS-T1-GE3 Vishay Semiconductors Availability: 0In Stock3,000 On Order Expected 15-Jul-26 MOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock3,000 On Order Expected 15-Jul-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | - 20 V, 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2369DS-T1-BE3 | |||
Mfr: SI2318CDS-T1-GE3 TTI: SI2318CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | - 20 V, 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2318CDS-T1-BE3 SI2318CDS-GE3 | |||
Mfr: SI7431DP-T1-E3 TTI: SI7431DP-T1-E3 Vishay Semiconductors Availability: 0In Stock6,000 On Order Expected 03-Jun-27 MOSFETs -200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock6,000 On Order Expected 03-Jun-27 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 174 mOhms | - 20 V, 20 V | 4 V | 135 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7431DP-E3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 21 A | 19 mOhms | - 20 V, 20 V | 1.2 V | 11.8 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR836DP-GE3 | ||||
Mfr: IRF540STRLPBF TTI: IRF540STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs 100V N-CH HEXFET D2-PAK | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | - 8 V, 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2312CDS-T1-BE3 SI2312CDS-GE3 SI7621DN-T1-GE3 | ||||
Mfr: IRFR9214TRPBF TTI: IRFR9214TRPBF Vishay Semiconductors Availability: 0In Stock26,000 On Order Expected MOSFETs TO252 250V 2.7A P-CH MOSFET | 0In Stock26,000 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: SI1539CDL-T1-GE3 TTI: SI1539CDL-T1-GE3 Vishay Semiconductors Availability: 0In Stock9,000 On Order Expected 31-Dec-27 MOSFETs -30V Vds 20V Vgs SC70-6 N&P PAIR | 0In Stock9,000 On Order Expected 31-Dec-27 | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 700 mA | 388 mOhms, 890 mOhms | - 20 V, 20 V | 2.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1539CDL-T1-BE3 SI1539CDL-GE3 | |||
Mfr: SI7149ADP-T1-GE3 TTI: SI7149ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.2 mOhms | - 25 V, 25 V | 2.5 V | 90 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel |