Vishay Semiconductors - MOSFETs
2,253 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 20 V | 1.4 A | 150 mOhms | 8 V | 800 mV | 4.3 nC | - 50 C | + 150 C | 280 mW | Enhancement | TrenchFET | Reel | SI1317DL-T1-BE3 SI1307EDL-T1-GE3 | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2338DS-T1-BE3 SI2338DS-GE3 | ||||
Mfr: SI1553CDL-T1-GE3 TTI: SI1553CDL-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SC70-6 N&P PAIR | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 700 mA | 390 mOhms, 850 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1553CDL-T1-BE3 SI1553DL-T1-GE3 SI1563DH-T1-GE3 SI1563EDH-T1-GE3 SI1555DL-T1-E3-S | |||
Mfr: SISS5710DN-T1-GE3 TTI: SISS5710DN-T1-GE3 Vishay Semiconductors MOSFETs PWRPK 150V 26.2A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SI4490DY-T1-GE3 TTI: SI4490DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 4 A | 80 mOhms | 20 V | 2 V | 42 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4490DY-GE3 | |||
Mfr: SI5513CDC-T1-E3 TTI: SI5513CDC-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 3.7 A, 4 A | 55 mOhms, 150 mOhms | 12 V | 600 mV | 4.2 nC, 5.6 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5513CDC-E3 | |||
Mfr: SI7232DN-T1-GE3 TTI: SI7232DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 20 V | 25 A | 16.4 mOhms | 8 V | 400 mV | 32 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET | Reel | SI7232DN-GE3 | |||
Mfr: SI2367DS-T1-GE3 TTI: SI2367DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.8 A | 66 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2367DS-T1-BE3 SI2367DS-GE3 | |||
Mfr: SI2303CDS-T1-E3 TTI: SI2303CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | 20 V | 1 V | 4 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303CDS-E3 | |||
Mfr: SI4136DY-T1-GE3 TTI: SI4136DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 46 A | 2 mOhms | 20 V | 1 V | 110 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4136DY-GE3 | |||
Mfr: SI7716ADN-T1-GE3 TTI: SI7716ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 16 A | 13.5 mOhms | 20 V | 2.5 V | 15.4 nC | - 55 C | + 150 C | 27.7 W | Enhancement | TrenchFET | Reel | SI7716ADN-GE3 | |||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
Mfr: SI4100DY-T1-GE3 TTI: SI4100DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF-BE3 SIHF740-E3 | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 11 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 80 V | 50 A | 25.2 mOhms | 20 V | 1 V | 105 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P08-25L-BE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 47 A | 9 mOhms | 20 V | 3 V | 33 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET | Reel | SI7848BDP-E3 | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 90 A | 13.8 mOhms | 20 V | 2 V | 96 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2356DS-T1-BE3 | ||||
Mfr: SI7623DN-T1-GE3 TTI: SI7623DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.1 mOhms | 12 V | 1.5 V | 180 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI5419DU-T1-GE3 TTI: SI5419DU-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 30 V | 12 A | 33 mOhms | 20 V | 2.5 V | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | SI5419DU-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 11 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 175 C | 2.5 W | Enhancement | Reel | IRF9Z24PBF-BE3 | |||||
Mfr: SI1427EDH-T1-GE3 TTI: SI1427EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2 A | 165 mOhms | 8 V | 1 V | 21 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1427EDH-T1-BE3 | |||
Mfr: SI4100DY-T1-E3 TTI: SI4100DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 150 A | 3.18 mOhms | 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Tube |