Vishay Semiconductors - MOSFETs
2,253 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFIBF20GPBF TTI: IRFIBF20GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 900V 1.2A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 1.2 A | 8 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 3.3 A | 1.5 Ohms | 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRF610PBF-BE3 | |||||
Mfr: IRLIZ44GPBF TTI: IRLIZ44GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 30 Amp | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 30 A | 28 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | |||||
Mfr: IRF9Z20PBF TTI: IRF9Z20PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 50V 9.7 Amp | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 9.7 A | 280 mOhms | 20 V | 4 V | 26 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | |||||
Mfr: IRFUC20PBF TTI: IRFUC20PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 600V 2.0 Amp | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | 20 V | 2 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | ||||
Mfr: SIR416DP-T1-GE3 TTI: SIR416DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 50 A | 3.8 mOhms | 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR416DP-GE3 | |||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | 20 V | 3 V | 2.8 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-GE3 | ||||
Mfr: SI9926CDY-T1-E3 TTI: SI9926CDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 8 A | 18 mOhms | 12 V | 600 mV | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9926CDY-E3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.6 mOhms | 12 V | 600 mV | 36.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR404DP-GE3 | ||||
Mfr: SI7658ADP-T1-GE3 TTI: SI7658ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 2.2 mOhms | 20 V | 1.2 V | 110 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7658ADP-GE3 | |||
Mfr: SI4485DY-T1-GE3 TTI: SI4485DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 6.0A 5.0W 42mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 6 A | 72 mOhms | 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4485DY-GE3 | |||
Mfr: SI7738DP-T1-E3 TTI: SI7738DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-E3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Reel | ||||||
Mfr: SIRA52ADP-T1-RE3 TTI: SIRA52ADP-T1-RE3 Vishay Semiconductors MOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 131 A | 1.63 mOhms | - 16 V, 20 V | 1.1 V | 100 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS72DN-T1-GE3 TTI: SISS72DN-T1-GE3 Vishay Semiconductors MOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 150 V | 25.5 A | 42 mOhms | 20 V | 2 V | 22 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, ThunderFET, PowerPAK | Reel | ||||
Mfr: SISH112DN-T1-GE3 TTI: SISH112DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SH | N-Channel | 1 Channel | 30 V | 17.8 A | 7.5 mOhms | 12 V | 600 mV | 27 nC | - 50 C | + 150 C | 3.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIJA72ADP-T1-GE3 TTI: SIJA72ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds; 16/-12V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 96 A | 3.42 mOhms | - 16 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISH106DN-T1-GE3 TTI: SISH106DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds; +/-12V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | 12 V | 600 mV | 27 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR662DP-T1-GE3 TTI: SIR662DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V 2.7mOhm@10V 60A N-Ch MV T-FET | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 100 A | 2.2 mOhms | 20 V | 1 V | 96 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR662DP-GE3 | |||
Mfr: SI8817DB-T2-E1 TTI: SI8817DB-T2-E1 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 2.9 A | 61 mOhms | 8 V | 1 V | 19 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 8 V | 12 A | 9.4 mOhms | 5 V | 350 mV | 15 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA436DJ-GE3 | ||||
Mfr: SI8823EDB-T2-E1 TTI: SI8823EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs MICRO FOOT | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 2.7 A | 77 mOhms | 8 V | 800 mV | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | Reel | |||||
Mfr: SI8489EDB-T2-E1 TTI: SI8489EDB-T2-E1 Vishay Semiconductors MOSFETs -20V Vds 12V Vgs MICRO FOOT 1 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 5.4 A | 36 mOhms | 12 V | 1.2 V | 27 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel |