Vishay Semiconductors - MOSFETs
2,253 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRF720PBF-BE3 | |||||
Mfr: IRFBC30APBF TTI: IRFBC30APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 3.6A N-CH | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | 30 V | 4.5 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRFBC30APBF-BE3 | ||||
Mfr: IRLIZ14GPBF TTI: IRLIZ14GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 N CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 8 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 175 C | 25 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.1 mOhms | 12 V | 1.5 V | 183 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7615DN-GE3 | ||||
Mfr: IRFIB6N60APBF TTI: IRFIB6N60APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 5.5A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 5.5 A | 750 mOhms | 30 V | 2 V | 49 nC | - 55 C | + 150 C | 60 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Tube | ||||||
Mfr: IRFR220TRLPBF TTI: IRFR220TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 200V 4.8A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFPC50PBF TTI: IRFPC50PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO247 600V 11A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 11 A | 600 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 180 W | Enhancement | Reel | |||||
Mfr: SISS42LDN-T1-GE3 TTI: SISS42LDN-T1-GE3 Vishay Semiconductors MOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 100 V | 39 A | 14.9 mOhms | 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHG47N60AE-GE3 TTI: SIHG47N60AE-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 43 A | 56 mOhms | 30 V | 4 V | 121 nC | - 55 C | + 150 C | 313 W | Enhancement | Reel | |||||
Mfr: IRF9520STRLPBF TTI: IRF9520STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH -100V HEXFET MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 14 A | 280 mOhms | 20 V | 2 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | ||||||
Mfr: IRFBF30PBF TTI: IRFBF30PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 900V 3.6A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRFBF30PBF-BE3 | ||||
Mfr: SI7812DN-T1-E3 TTI: SI7812DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 75V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 75 V | 16 A | 37 mOhms | 20 V | 3 V | 16 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7812DN-E3 | |||
Mfr: SI4816BDY-T1-E3 TTI: SI4816BDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816BDY-E3 | |||
Mfr: SI7212DN-T1-GE3 TTI: SI7212DN-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 30 V | 6.8 A | 36 mOhms | 12 V | 600 mV | 11 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7212DN-GE3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
Mfr: SISF04DN-T1-GE3 TTI: SISF04DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 30V(S1-S2) PowerPAK 1212-8F | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 30 V | 108 A | 4 mOhms | - 12 V, 16 V | 2.3 V | 40 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR696DP-T1-GE3 TTI: SIR696DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 125V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 125 V | 60 A | 11.5 mOhms | 20 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIJA54DP-T1-GE3 TTI: SIJA54DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 60 A | 2.35 mOhms | - 16 V, 20 V | 2.4 V | 104 nC | - 55 C | + 150 C | 36.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI3493BDV-T1-GE3 TTI: SI3493BDV-T1-GE3 Vishay Semiconductors MOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-GE3 | |||
Mfr: IRFIBE20GPBF TTI: IRFIBE20GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 800V 1.4A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.4 A | 6.5 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | ||||||
Mfr: IRF510STRRPBF TTI: IRF510STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 5.6A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.9 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel |