Vishay Semiconductors - MOSFETs
2,238 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SISA18ADN-T1-GE3 TTI: SISA18ADN-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 38.3 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR172ADP-T1-GE3 TTI: SIR172ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 24 A | 8.5 mOhms | - 20 V, 20 V | 1.2 V | 44 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFB11N50APBF TTI: IRFB11N50APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 500V 11A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | - 30 V, 30 V | 4 V | 52 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | IRFB11N50APBF-BE3 | ||||
Mfr: SIR770DP-T1-GE3 TTI: SIR770DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 8 A | 21 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 17.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR770DP-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 35 A | 10 mOhms | - 20 V, 20 V | 2.8 V | 47.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | SI7143DP-GE3 | ||||
Mfr: SI7922DN-T1-E3 TTI: SI7922DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 2.5 A | 195 mOhms | - 20 V, 20 V | 3.5 V | 5.2 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7922DN-T1 | |||
Mfr: IRFR9014TRPBF TTI: IRFR9014TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 P CHAN 60V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR9014TRPBF-BE3 | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR210PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 5 A | 50 mOhms | - 20 V, 20 V | 2 V | 36 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4488DY-GE3 | ||||
Mfr: IRF9Z14SPBF TTI: IRF9Z14SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 P CHAN 60V | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | - 20 V, 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | ||||||
Mfr: IRFU110PBF TTI: IRFU110PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO251 100V 4.3A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 75 V | 28 A | 11 mOhms | - 20 V, 20 V | 2.5 V | 68 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7148DP-E3 | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
Mfr: IRFU220PBF TTI: IRFU220PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO251 200V 4.8A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
Mfr: SI4420BDY-T1-GE3 TTI: SI4420BDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 13.5A 2.5W 8.5mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 13.5 A | 8.5 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI4420BDY-GE3 | |||
Mfr: SUD40N10-25-E3 TTI: SUD40N10-25-E3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SUD3 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 40 A | 25 mOhms | - 20 V, 20 V | 1 V | 40 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 7.8 A | 1.2 Ohms | - 20 V, 20 V | 2 V | 200 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 4 A | 58 mOhms | - 12 V, 12 V | 600 mV | 17 nC | - 50 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9933CDY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 27.2 A | 4.5 mOhms | - 25 V, 25 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4122DY-GE3 | ||||
0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 61 mOhms | - 8 V, 8 V | 400 mV | 15 nC, 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA517DJ-GE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 5.5 mOhms | - 20 V, 20 V | 3 V | 260 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7633DP-GE3 | ||||
Mfr: SI1424EDH-T1-GE3 TTI: SI1424EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 20 V | 4 A | 33 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1424EDH-T1-BE3 |
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