Vishay Semiconductors - MOSFETs
2,238 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 5.2 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | ||||||
Mfr: IRF9630SPBF TTI: IRF9630SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 6.5A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 2 V | 60 nC | - 55 C | + 150 C | 130 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 18.3 A | 60 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 38.5 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 1.7 A | 240 mOhms | - 20 V, 20 V | 2 V | 12.1 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7820DN-T1 | ||||
Mfr: SI7922DN-T1-E3 TTI: SI7922DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 2.5 A | 195 mOhms | - 20 V, 20 V | 3.5 V | 5.2 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7922DN-T1 | |||
Mfr: SI7922DN-T1-GE3 TTI: SI7922DN-T1-GE3 Vishay Semiconductors MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 2.5 A | 195 mOhms | - 20 V, 20 V | 3.5 V | 5.2 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7922DN-GE3 | |||
Mfr: SIS488DN-T1-GE3 TTI: SIS488DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SIS4 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 40 A | 4.5 mOhms | - 20 V, 20 V | 1.1 V | 32 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7454DDP-T1-GE3 TTI: SI7454DDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 27.8 A | 27 mOhms | - 20 V, 20 V | 2.8 V | 19.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | SI7454CDP-T1-GE3 | |||
Mfr: SISA18ADN-T1-GE3 TTI: SISA18ADN-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 38.3 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR688DP-T1-GE3 TTI: SIR688DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 60 A | 2.9 mOhms | - 20 V, 20 V | 1.3 V | 66 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIJ478DP-T1-GE3 TTI: SIJ478DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 80 V | 60 A | 8 mOhms | - 20 V, 20 V | 1.4 V | 54 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR882ADP-T1-GE3 TTI: SIR882ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 7.2 mOhms | - 20 V, 20 V | 1.2 V | 60 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR882ADP-GE3 | |||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | - 30 V, 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 37 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 58 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 31.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA14DP-GE3 | ||||
Mfr: SI1013CX-T1-GE3 TTI: SI1013CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC89-3 | 0In Stock | Si | SMD/SMT | P-Channel | 1 Channel | 20 V | 450 mA | 760 mOhms | - 8 V, 8 V | 1 V | 1.65 nC | - 55 C | + 150 C | 190 mW | Enhancement | TrenchFET | Reel | |||||
Mfr: SIA416DJ-T1-GE3 TTI: SIA416DJ-T1-GE3 Vishay Semiconductors MOSFETs 100V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 11.3 A | 68 mOhms | - 20 V, 20 V | 1.6 V | 10 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR172ADP-T1-GE3 TTI: SIR172ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 24 A | 8.5 mOhms | - 20 V, 20 V | 1.2 V | 44 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR664DP-T1-GE3 TTI: SIR664DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 60 A | 6 mOhms | - 20 V, 20 V | 1.3 V | 26 nC | - 55 C | + 150 C | 50 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS23DN-T1-GE3 TTI: SISS23DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 50 A | 3.5 mOhms | - 8 V, 8 V | 900 mV | 300 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISA04DN-T1-GE3 TTI: SISA04DN-T1-GE3 Vishay Semiconductors MOSFETs For New Design See: 78-SISHA04DN-T1-GE3 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SISA04DN-GE3 | |||
Mfr: SIHH14N60E-T1-GE3 TTI: SIHH14N60E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 16 A | 220 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | |||||
Mfr: SISA72DN-T1-GE3 TTI: SISA72DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 60 A | 3.5 mOhms | - 16 V, 20 V | 1.1 V | 41.5 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | - 30 V, 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel |