Vishay Semiconductors - MOSFETs
2,238 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 19.8 A | 4.6 mOhms | - 20 V, 20 V | 1 V | 30 nC | - 55 C | + 150 C | 3.25 W | Enhancement | TrenchFET | Reel | SI4204DY-GE3 | ||||
Mfr: SI5403DC-T1-GE3 TTI: SI5403DC-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 30 V | 6 A | 30 mOhms | - 20 V, 20 V | 1 V | 28 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI5403DC-GE3 | |||
Mfr: SI4459ADY-T1-GE3 TTI: SI4459ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 29 A | 5 mOhms | - 20 V, 20 V | 1 V | 129 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4459ADY-GE3 | |||
Mfr: SIB452DK-T1-GE3 TTI: SIB452DK-T1-GE3 Vishay Semiconductors MOSFETs 190V Vds 16V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 190 V | 1.5 A | 2.4 Ohms | - 16 V, 16 V | 600 mV | 6.5 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB452DK-GE3 | |||
Mfr: SIR464DP-T1-GE3 TTI: SIR464DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 50A 69W 3.1mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 50 A | 3.1 mOhms | - 20 V, 20 V | 1.2 V | 95 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR464DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 5.7 mOhms | - 20 V, 20 V | 1 V | 44 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4168DY-GE3 | ||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3460DDV-T1-BE3 SI3460DDV-GE3 | ||||
Mfr: SIHFU9024-GE3 TTI: SIHFU9024-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -60V TO251 | 0In Stock | Si | Through Hole | TO-251-3 | Reel | |||||||||||||||||
Mfr: SI1411DH-T1-GE3 TTI: SI1411DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 150 V | 520 mA | 2.7 Ohms | - 20 V, 20 V | 4.5 V | 6.3 nC | - 55 C | + 150 C | 1 W | Enhancement | TrenchFET | Reel | SI1411DH-T1-BE3 | |||
Mfr: SI4447ADY-T1-GE3 TTI: SI4447ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 7.2 A | 45 mOhms | - 20 V, 20 V | 1.2 V | 25 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7456DDP-T1-GE3 TTI: SI7456DDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 27.8 A | 27 mOhms | - 20 V, 20 V | 2.8 V | 19.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
Mfr: SIRA12DP-T1-GE3 TTI: SIRA12DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 4.3mOhm@10V 25A N-Ch G-IV | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA12DP-GE3 | |||
Mfr: SIR818DP-T1-GE3 TTI: SIR818DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30 Volts 50 Amps 69 Watts | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 50 A | 2.8 mOhms | - 20 V, 20 V | 1 V | 95 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR818DP-GE3 | |||
Mfr: SI8472DB-T2-E1 TTI: SI8472DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 1 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 4.5 A | 44 mOhms | - 8 V, 8 V | 400 mV | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR474DP-T1-GE3 TTI: SIR474DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 20A 29.8W | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 20 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 27 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR474DP-GE3 | |||
Mfr: SIS410DN-T1-GE3 TTI: SIS410DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | - 20 V, 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS410DN-GE3 | |||
Mfr: SI4932DY-T1-GE3 TTI: SI4932DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 8.0A 3.2W 15mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8 A | 15 mOhms | - 20 V, 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI4932DY-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 30 A | 5.5 mOhms | - 20 V, 20 V | 1 V | 35 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR424DP-GE3 | ||||
Mfr: SUD50N04-8M8P-4GE3 TTI: SUD50N04-8M8P-4GE3 Vishay Semiconductors MOSFETs 40V 50A 48.1W 8.8mohm @ 10V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 50 A | 8 mOhms | - 20 V, 20 V | 3 V | 37 nC | - 55 C | + 150 C | 48.1 W | Enhancement | TrenchFET | Reel | SUD50N04-8M8P-4BE3 | |||
Mfr: SI2301CDS-T1-E3 TTI: SI2301CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | - 8 V, 8 V | 400 mV | 10 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI2301CDS-T1-BE3 SI2301CDS-E3 | |||
Mfr: SI2333CDS-T1-E3 TTI: SI2333CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V 5.1A 2.5W 35mohm @ 4.5V | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 7.1 A | 35 mOhms | - 8 V, 8 V | 400 mV | 15 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2333CDS-T1-BE3 SI2333CDS-E3 | |||
Mfr: SI4128DY-T1-E3 TTI: SI4128DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 10.9 A | 24 mOhms | - 20 V, 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4128DY-E3 | |||
Mfr: SISS30DN-T1-GE3 TTI: SISS30DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds; 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 54.7 A | 8.25 mOhms | - 20 V, 20 V | 2 V | 40 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR014PBF-BE3 |
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