Vishay Semiconductors - MOSFETs
2,243 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SISB46DN-T1-GE3 TTI: SISB46DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 34 A | 11.71 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2318CDS-T1-GE3 TTI: SI2318CDS-T1-GE3 Vishay Semiconductors Availability: 39,000In Stock90,000 On Order Expected 24-Jun-30 MOSFETs 40V Vds 20V Vgs SOT-23 | 39,000In Stock90,000 On Order Expected 24-Jun-30 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2318CDS-T1-BE3 SI2318CDS-GE3 | |||
Mfr: SISS27ADN-T1-GE3 TTI: SISS27ADN-T1-GE3 Vishay Semiconductors Availability: 33,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8S | 33,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 50 A | 4.2 mOhms | 20 V | 2.2 V | 117 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFP450LCPBF TTI: IRFP450LCPBF Vishay Semiconductors Availability: 500In StockMOSFETs 500V N-CH HEXFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 30 V | 2 V | 74 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRL640SPBF TTI: IRL640SPBF Vishay Semiconductors Availability: 2,000In Stock1,000 On Order Expected 14-Oct-26 MOSFETs N-Chan 200V 17 Amp | 2,000In Stock1,000 On Order Expected 14-Oct-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI5936DU-T1-GE3 TTI: SI5936DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 2 Channel | 30 V | 6 A | 30 mOhms | 20 V | 1.2 V | 11 nC | - 55 C | + 150 C | 10.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR420TRPBF TTI: IRFR420TRPBF Vishay Semiconductors Availability: 24,000In Stock8,000 On Order Expected 20-Jan-27 MOSFETs N-CH 500V HEXFET MOSFET D-PAK | 24,000In Stock8,000 On Order Expected 20-Jan-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 4 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR420TRPBF-BE3 | ||||
Mfr: SI7617DN-T1-GE3 TTI: SI7617DN-T1-GE3 Vishay Semiconductors Availability: 141,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 141,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 12.3 mOhms | 25 V | 1.2 V | 39 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7617DN-GE3 | |||
Mfr: SI2301CDS-T1-GE3 TTI: SI2301CDS-T1-GE3 Vishay Semiconductors Availability: 33,000In Stock12,000 On Order Expected 09-Aug-30 MOSFETs -20V Vds 8V Vgs SOT-23 | 33,000In Stock12,000 On Order Expected 09-Aug-30 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | 8 V | 1 V | 3.3 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI2301CDS-T1-BE3 SI2301CDS-GE3 | |||
Mfr: SI7119DN-T1-E3 TTI: SI7119DN-T1-E3 Vishay Semiconductors Availability: 72,000In Stock102,000 On Order Expected MOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 72,000In Stock102,000 On Order Expected | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-E3 | |||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-CH 1000V HEXFET MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: IRFR9024TRPBF TTI: IRFR9024TRPBF Vishay Semiconductors Availability: 2,000In Stock18,000 On Order Expected MOSFETs TO252 60V 8.8A P-CH MOSFET | 2,000In Stock18,000 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9024TRPBF-BE3 | ||||
Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 9.2A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 | ||||
Mfr: IRF540STRLPBF TTI: IRF540STRLPBF Vishay Semiconductors Availability: 8,800In StockMOSFETs 100V N-CH HEXFET D2-PAK | 8,800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Tube | |||||
Mfr: SUD08P06-155L-GE3 TTI: SUD08P06-155L-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs -30V 0.155ohm@-10V -8.4A P-CH | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.2 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SUD08P06-155L-BE3 | |||
Mfr: SI2302CDS-T1-E3 TTI: SI2302CDS-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.6 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 710 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-E3 | |||
Mfr: SI7223DN-T1-GE3 TTI: SI7223DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 2 Channel | 30 V | 6 A | 26.4 mOhms | 20 V | 1 V | 26.3 nC | - 55 C | + 150 C | 23 W | Enhancement | Reel | |||||
Mfr: SI7949DP-T1-E3 TTI: SI7949DP-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 60 V | 5 A | 64 mOhms | 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7949DP-E3 | |||
Mfr: SI4840BDY-T1-E3 TTI: SI4840BDY-T1-E3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 40V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-E3 | |||
Mfr: SUD19P06-60-GE3 TTI: SUD19P06-60-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 60V 19A 38.5W 60mohm @ 10V | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 19 A | 60 mOhms | 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | |||
Mfr: SI4435DDY-T1-GE3 TTI: SI4435DDY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-GE3 | |||
Mfr: SI4804CDY-T1-GE3 TTI: SI4804CDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V 8.0A 3.1W 22mohm @ 10V | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8 A | 22 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4804CDY-GE3 | |||
Mfr: IRFR1N60ATRPBF TTI: IRFR1N60ATRPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs N-Chan 600V 1.4 Amp | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF-BE3 | ||||
Mfr: SI4840BDY-T1-GE3 TTI: SI4840BDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 40V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-GE3 | |||
Mfr: SI6562CDQ-T1-GE3 TTI: SI6562CDQ-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR | 15,000In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 22 mOhms, 30 mOhms | 8 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | TrenchFET | Reel | SI6562CDQ-GE3 |