Vishay - MOSFETs
1,274 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | - 8 V, 8 V | 2.5 V | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | SI1967DH-T1-GE3 SI1967DH-T1-E3 | |||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 60 V | 93.6 A | 3.75 mOhms | - 10 V, 10 V | 2.5 V | 34.6 nC | - 55 C | + 150 C | Enhancement | PowerPAK | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 43.4 A | 11.5 mOhms | - 20 V, 20 V | 3 V | 15 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | ||||||
Mfr: SIHB5N80AE-GE3 TTI: SIHB5N80AE-GE3 Vishay Availability: 0In StockMOSFETs TO263 800V 4.4A N-CH MOSFET | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 60 V | 45.9 A | 8.9 mOhms | - 20 V, 20 V | 3 V | 18.3 nC | - 55 C | + 150 C | 33.7 W | Enhancement | Reel | ||||||
Mfr: SIR578DP-T1-RE3 TTI: SIR578DP-T1-RE3 Vishay Availability: 0In StockMOSFETs SOT669 150V 70.2A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 70.2 A | 8.8 mOhms | - 10 V, 10 V | 4 V | 24.5 nC | - 55 C | + 150 C | Enhancement | Reel | ||||||
Mfr: SIHK105N60EF-T1GE3 TTI: SIHK105N60EF-T1GE3 Vishay Availability: 0In StockMOSFETs PWRPK 600V 24A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK 10 x 12 | N-Channel | 1 Channel | 600 V | - 20 V, 20 V | 5 V | - 55 C | + 150 C | Enhancement | Reel | |||||||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 40 V | 109 A | 2.65 mOhms | - 16 V, 20 V | 2.4 V | 40.5 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | ||||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | 60 V | 8.9 A | 5.6 mOhms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | |||||||||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 62.3 A | 7.35 mOhms | - 20 V, 20 V | 2.5 V | 34.6 nC | - 55 C | + 150 C | Enhancement | Reel | |||||||
Mfr: SUM70042E-GE3 TTI: SUM70042E-GE3 Vishay Availability: 0In StockMOSFETs TO263 100V 150A N-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263 | N-Channel | 1 Channel | 100 V | 150 A | 4 mOhms | - 10 V, 10 V | 4 V | 84 nC | - 55 C | + 175 C | 278 W | Reel | ||||||
Mfr: SIHP100N65E-GE3 TTI: Not Assigned Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V | 0In Stock | Si | Through Hole | TO-220AB-3 | N-Channel | 1 Channel | 650 V | 30 A | 100 mOhms | - 30 V, 30 V | 5 V | 41 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-8-8L-4 | N-Channel | 1 Channel | 60 V | 602 A | 520 uOhms | - 20 V, 20 V | 3.5 V | 183 nC | - 55 C | + 175 C | 600 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 45.3 A | 13.5 mOhms | - 20 V, 20 V | 4 V | 10 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-220AB | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | - 30 V, 30 V | 5 V | 33 nC | - 55 C | + 150 C | 179 W | Enhancement | Vishay | ||||||
0In Stock | Si | SMD/SMT | TO-263 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | - 30 V, 30 V | 5 V | 33 nC | - 55 C | + 150 C | 179 W | Enhancement | Vishay | ||||||
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6 A | 350 mOhms | - 30 V, 30 V | 4 V | 36 nC | - 55 C | + 150 C | 33 W | Enhancement | |||||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 6 A | 203 mOhms | - 20 V, 20 V | 1.5 V | 20 nC | - 55 C | + 175 C | 27.8 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 1.78 A | 160 mOhms | - 20 V, 20 V | 4 V | 3.8 nC | - 55 C | + 150 C | 1.34 W | Enhancement | TrenchFET | Reel |
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