ROHM Semiconductor - SiC MOSFETs
179 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 70 A | 39 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | + 175 C | 262 W | Enhancement | |||||||
Not Available Online | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 24 A | 105 mOhms | - 4 V, + 22 V | 5.6 V | 51 nC | - 55 C | + 175 C | 134 W | Enhancement | SCT3105KR | |||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 81 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4018KE | ||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 72 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 131 nC | - 55 C | + 175 C | Enhancement |
