IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | - 15 V, 15 V | 4 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | - 15 V, 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 94 A | 55 mOhms | - 30 V, 30 V | 3 V | 228 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 1.5 A | 40 Ohms | - 20 V, 20 V | 2 V | 41 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 10 A | 1.4 Ohms | - 30 V, 30 V | 6.5 V | 56 nC | - 55 C | + 150 C | 380 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 250 V | 360 mA | 4 Ohms | - 15 V, 15 V | - 55 C | + 125 C | 1.1 W | Depletion | Clare | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 350 V | 5 mA | 14 Ohms | - 20 V, 20 V | 3.6 V | - 40 C | + 85 C | 2.5 W | Depletion | Clare | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 12 A | 2 Ohms | - 30 V, 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 100 V | 210 A | 7.5 mOhms | - 15 V, 15 V | 4.5 V | 740 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 52 A | 120 mOhms | - 30 V, 30 V | 4.5 V | 113 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 180 A | 12.9 mOhms | - 20 V, 20 V | 5 V | 345 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 48 A | 100 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 500 W | Enhancement | HyperFET | Tube | ||||||
Mfr: IXFX120N65X2 TTI: IXFX120N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/120A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 120 A | 24 mOhms | - 30 V, 30 V | 2.7 V | 225 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 200 mA | 60 Ohms | - 20 V, 20 V | 4 V | 4.7 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | - 15 V, 15 V | 4 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 60 A | 40 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 175 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 330 mOhms | - 30 V, 30 V | 2.5 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | Polar2 HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 60 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 49 nC | - 55 C | + 175 C | 176 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 6 A | 3.5 Ohms | - 20 V, 20 V | 5 V | 67 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | |||||
Mfr: IXFB210N30P3 TTI: IXFB210N30P3 IXYS Availability: Not Available OnlineMOSFETs N-Channel: Power MOSFET w/Fast Diode | Not Available Online | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 300 V | 210 A | 14.5 mOhms | - 20 V, 20 V | 5 V | 268 nC | - 55 C | + 150 C | 1.89 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXTK90P20P TTI: IXTK90P20P IXYS Availability: Not Available OnlineMOSFETs -90.0 Amps -200V 0.044 Rds | Not Available Online | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 200 V | 90 A | 44 mOhms | - 20 V, 20 V | 4.5 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube |
Added To Cart
- Mfr:{{cartPopObject.addedToCartObject.mfrPartNumber}}
- TTI:{{cartPopObject.addedToCartObject.ttiPartNumber}}
- {{cartPopObject.addedToCartObject.manufacturer}}
- Ext. Price:{{cartPopObject.addedToCartObject.extendedPrice}}
- {{cartPopObject.addedToCartObject.quantity}} @{{cartPopObject.addedToCartObject.price}}
- {{cartPopObject.addedToCartObject.numberOfReels}} reels of {{cartPopObject.addedToCartObject.partsPerReel}} @{{cartPopObject.addedToCartObject.price}}
- + $7.00 Per Reel