IXYS - MOSFETs
2,313 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 55 V | 140 A | 5.4 mOhms | - 20 V, 20 V | 2 V | 82 nC | - 55 C | + 175 C | 180 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTF250N075T TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 250 Amps 75V 3.4 Rds | Not Available Online | Si | Through Hole | ISOPLUS i4-PAC-3 | N-Channel | 1 Channel | 75 V | 140 A | 4.4 mOhms | - 55 C | + 175 C | 200 W | Enhancement | Tube | |||||||
Mfr: IXUV170N075S TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 170 Amps 75V 0.0053 Rds | Not Available Online | Si | SMD/SMT | PLUS-220-SMD-3 | N-Channel | 1 Channel | 75 V | 175 A | 5.3 mOhms | 300 W | HiPerFET | Box | |||||||||
Not Available Online | Si | Through Hole | PLUS-220-3 | N-Channel | 1 Channel | 800 V | 20 A | 520 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.5 A | 300 mOhms | - 20 V, 20 V | 3.5 V | 30 nC | - 55 C | + 150 C | 32 W | Enhancement | CoolMOS | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1.1 kV | 40 A | 260 mOhms | - 30 V, 30 V | 3.5 V | 310 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 600 V | 20 A | 350 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 500 V | 26 A | 200 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 24 A | 390 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 560 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 32 A | 160 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 416 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 60 A | 80 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 700 W | Enhancement | HiPerFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-204AE-3 | N-Channel | 1 Channel | 300 V | 40 A | 88 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 48 A | 90 mOhms | - 20 V, 20 V | - 40 C | + 150 C | 400 W | Enhancement | HyperFET | Tube | ||||||
Mfr: IXTH12N100 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 12 Amps 1000V 1.05 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.05 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 48 A | 50 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 275 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-204AE-3 | N-Channel | 1 Channel | 500 V | 24 A | 230 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | MegaMOS | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 90 A | 20 mOhms | - 30 V, 30 V | - 55 C | + 175 C | 455 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-3P-3 | 150 V | 56 A | 36 Ohms | Box | ||||||||||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 110 A | 24 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 694 W | Enhancement | Tube | |||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 8 A | 450 mOhms | - 30 V, 30 V | 3 V | 11 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 130 A | 8.5 mOhms | - 20 V, 20 V | 2.5 V | 87 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | |||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 270 A | 3.1 mOhms | - 20 V, 20 V | 2 V | 200 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 850 V | 30 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 68 nC | - 55 C | + 150 C | 695 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | ||||||||||||||||||||
Not Available Online | Si |
