IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | - 20 V, 20 V | 5.2 V | 29 nC | - 55 C | + 150 C | 446 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 94 A | 36 mOhms | HiPerFET | Tube | |||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 500 V | 34 A | 180 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 200 V | 150 A | 15 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | SMPD-24 | N-Channel | 1 Channel | 40 V | 600 A | 1.3 mOhms | - 20 V, 20 V | 1.5 V | 590 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 175 V | 150 A | 12 mOhms | - 30 V, 30 V | 2.5 V | 233 nC | - 55 C | + 175 C | 880 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | - 20 V, 20 V | 5 V | 198 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 180 A | 8 mOhms | - 20 V, 20 V | 2 V | 390 nC | - 55 C | + 150 C | 560 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 45 A | 72 mOhms | - 30 V, 30 V | 3 V | 197 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK60N55Q2 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 60 Amps 550V 0.09 Rds | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 550 V | 60 A | 88 mOhms | - 30 V, 30 V | 4.5 V | 200 nC | - 55 C | + 150 C | 735 W | Enhancement | HyperFET | Tube | |||
Mfr: IXFX60N55Q2 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 60 Amps 550V 0.09 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 550 V | 60 A | 88 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 735 W | Enhancement | HyperFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 4.5 V | 39 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.4 Ohms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | - 20 V, 20 V | 2 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 1 A | 14 Ohms | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 62 A | 40 mOhms | - 20 V, 20 V | 3 V | 70 nC | - 55 C | + 175 C | 350 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 76 A | 39 mOhms | - 30 V, 30 V | 3 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 200 V | 98 A | 26 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 102 A | 29 Ohms | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 200 V | 16 A | 160 mOhms | Tube | ||||||||||||
Mfr: IXFB100N50Q3 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/100A | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 500 V | 100 A | 49 mOhms | - 30 V, 30 V | 3.5 V | 255 nC | - 55 C | + 150 C | 1.56 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 50 V | 32 A | 39 mOhms | Tube |
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