IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXTH180N10T TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 180 Amps 100V 6.1 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 300 V | 210 A | 5.5 mOhms | 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 155 mOhms | 30 V | 2.5 V | 56 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 24 A | 175 mOhms | 30 V | 2.5 V | 47 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 14 A | 550 mOhms | 30 V | 3.5 V | 30 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | 30 V | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 150 V | 62 A | 40 mOhms | 20 V | - 55 C | + 175 C | 350 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 22 A | 350 mOhms | 30 V | 3 V | 62 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.2 A | 13 Ohms | 20 V | 2.5 V | 15.5 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 200 V | 72 A | 33 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 200 V | 72 A | 33 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 44 A | 85 Ohms | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 55 V | 360 A | 2.4 mOhms | 20 V | 2 V | 330 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | SMD-24 | N-Channel | 150 V | 50 A | 24 mOhms | Bulk | |||||||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 250 V | 44 A | 72 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 62 A | 50 mOhms | 30 V | 2.7 V | 100 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFX520N075T2 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 520A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 520 A | 2.2 mOhms | 20 V | 5 V | 545 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK140N20P TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 140 Amps 200V 0.018 Rds | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 140 A | 18 mOhms | 20 V | 2.5 V | 240 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 52 A | 73 mOhms | 20 V | 5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 26 A | 66 mOhms | 20 V | 2.5 V | 22 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube |