IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFB132N50P3 TTI: IXFB132N50P3 IXYS Availability: Not Available OnlineMOSFETs 500V 132A 0.039Ohm PolarP3 Power MOSFET | Not Available Online | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 500 V | 132 A | 39 mOhms | 30 V | 5 V | 250 nC | - 55 C | + 150 C | 1.89 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | 15 V | 2 V | 175 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | 20 V | 2.5 V | 254 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 94 A | 10.6 mOhms | 20 V | 4.5 V | 77 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | |||||
Mfr: IXTK120N25P TTI: IXTK120N25P IXYS Availability: Not Available OnlineMOSFETs 120 Amps 250V 0.024 Rds | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 120 A | 24 mOhms | 20 V | 5 V | 185 nC | - 55 C | + 175 C | 700 W | Enhancement | PolarHT | Tube | |||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 200 V | 36 A | 38 mOhms | 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 145 mOhms | 30 V | 3.5 V | 37 nC | - 55 C | + 150 C | 37 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 38 A | 50 mOhms | 20 V | 2.5 V | 35 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 200 V | 68 A | 55 mOhms | 15 V | 4 V | 380 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | 30 V | 2.7 V | 107 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 34 A | 105 mOhms | 30 V | 2.7 V | 56 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFX360N10T TTI: IXFX360N10T IXYS Availability: 0In StockMOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 360 A | 2.9 mOhms | 20 V | 2.5 V | 525 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | 20 V | - 55 C | + 175 C | 714 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | 20 V | 2.5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 44 A | 190 mOhms | 30 V | 3 V | 198 nC | - 55 C | + 150 C | 1.2 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 400 mA | 80 Ohms | 20 V | 2 V | 5.8 nC | - 55 C | + 150 C | 25 W | Depletion | Tube | |||||
Mfr: IXFB44N100P TTI: IXFB44N100P IXYS Availability: Not Available OnlineMOSFETs 44 Amps 1000V 0.22 Rds | Not Available Online | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1 kV | 44 A | 220 mOhms | 30 V | 6.5 V | 305 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 76 A | 42 mOhms | 20 V | 5 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 1.5 A | 40 Ohms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | 15 V | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 4 V | 58 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube |