IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFT150N30X3HV TTI: IXFT150N30X3HV IXYS Availability: 60In StockMOSFETs MSFT N-CH ULTRA JNCT X3 3&44 | 60In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | - 20 V, 20 V | 4.5 V | 177 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | - 30 V, 30 V | 3 V | 93 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
6,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 44 A | 30 mOhms | - 20 V, 20 V | 2.5 V | 27.4 nC | - 55 C | + 175 C | 130 W | Enhancement | HiPerFET | Tube | ||||
300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 50 A | 45 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 180 A | 10 mOhms | - 20 V, 20 V | 5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 50 V | 140 A | 9 mOhms | - 15 V, 15 V | 4 V | 200 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 175 C | 300 W | Enhancement | PolarP | Reel | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | - 20 V, 20 V | 5 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | - 20 V, 20 V | 4.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
Mfr: IXTY4N65X2 TTI: IXTY4N65X2 IXYS Availability: 0In Stock700 On Order Expected 23-Feb-27 MOSFETs TO252 650V 4A N-CH X2CLASS | 0In Stock700 On Order Expected 23-Feb-27 | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 4 A | 850 mOhms | - 30 V, 30 V | 3 V | 8.3 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | |||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.5 kV | 8 A | 3.6 Ohms | - 30 V, 30 V | 8 V | 250 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 600 mA | 1 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 150 C | 1.1 W | Depletion | Clare | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | - 15 V, 15 V | 4 V | 175 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 170 A | 11 mOhms | - 20 V, 20 V | 5 V | 265 nC | - 55 C | + 175 C | 1.15 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 24 A | 400 mOhms | - 30 V, 30 V | 3 V | 105 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.05 Ohms | - 20 V, 20 V | 3.5 V | 80 nC | - 55 C | + 150 C | 463 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 300 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 380 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 360 mOhms | - 30 V, 30 V | 3 V | 29 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 3.5 A | 2.5 Ohms | - 30 V, 30 V | 3 V | 7 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFP80N25X3 TTI: IXFP80N25X3 IXYS Availability: 0In StockMOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 80 A | 13 mOhms | - 20 V, 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 220 A | 5.5 mOhms | - 20 V, 20 V | 4.5 V | 157 nC | - 55 C | + 175 C | 800 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 20 A | 570 mOhms | - 30 V, 30 V | 6.5 V | 126 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 3 A | 1.5 Ohms | - 20 V, 20 V | 4.5 V | 40 nC | - 55 C | + 150 C | 125 W | Depletion | Tube |
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