UMZ8NTR ROHM Semiconductor

UMZ8NTR

Not Recommended for New Designs
Bipolar Transistors - BJT DUAL PNP/NPN

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UMZ8NTR

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Not Assigned

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Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Transistor PolarityNPN, PNP
ConfigurationDual
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max12 V, 50 V
Collector- Base Voltage VCBO15 V, 60 V
Emitter- Base Voltage VEBO7 V
Maximum DC Collector Current150 mA
Pd - Power Dissipation150 mW
Gain Bandwidth Product fT180 MHz, 260 MHz
Maximum Operating Temperature+ 150 C
SeriesUMZ8N
PackagingReel
DC Collector/Base Gain hfe Min120
DC Current Gain hFE Max120 at 1 mA, 6 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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