TIP3055G Bourns

TIP3055G

Bipolar Transistors - BJT

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TIP3055G

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Not Assigned

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Specifications

DescriptionProduct Attribute
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ManufacturerBourns
Product CategoryBipolar Transistors - BJT
TechnologySi
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max60 V
Collector- Base Voltage VCBO100 V
Emitter- Base Voltage VEBO7 V
Maximum DC Collector Current15 A
Pd - Power Dissipation90 W
Gain Bandwidth Product fT2.5 MHz
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
SeriesTIP3055
DC Collector/Base Gain hfe Min20 at 4 A, 4 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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