Reference Only

SQS407ENW-T1_GE3

MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8W.

Manufacturer:

Mfr Part:
SQS407ENW-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8W-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current16 A
Rds On - Drain-Source Resistance10.8 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge77 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation62.5 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time24 ns
Forward Transconductance - Min34 S
Product TypeMOSFETs
Rise Time4 ns
SeriesSQS
SubcategoryTransistors
Transistor Type1 P-Channel TrenchFET Power MOSFET
Typical Turn-Off Delay Time62 ns
Typical Turn-On Delay Time11.4 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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$0.432$2,592.00
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