Reference Only

SQJQ190E-T1_GE3

New Product
MOSFETs N-CHANNEL 200-V (D-S) 175C MOSFET.

Manufacturer:

Mfr Part:
SQJQ190E-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current95 A
Rds On - Drain-Source Resistance14.3 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Qg - Gate Charge52 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation375 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time8 ns
Forward Transconductance - Min55 S
Product TypeMOSFETs
Rise Time6 ns
SeriesSQJQ190E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 23 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Each

(Minimum: 2,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.05$4,100.00
Need more?