Reference Only

SQJQ186ER-T1_GE3

MOSFETs .

Manufacturer:

Mfr Part:
SQJQ186ER-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK 8 x 8LR
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current329 A
Rds On - Drain-Source Resistance2.3 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Qg - Gate Charge123 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation600 W
Channel ModeEnhancement
PackagingReel
Fall Time16 ns
Forward Transconductance - Min100 S
Product TypeMOSFETs
Rise Time21 ns
SeriesSQJQ
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time53 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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