Reference Only
SQJQ184ER-T1-GE3
MOSFETs
Datasheet
SQJQ184ER-T1-GE3 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Vds - Drain-Source Breakdown Voltage | 80 V | |
| Id - Continuous Drain Current | 430 A | |
| Rds On - Drain-Source Resistance | 1.4 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V | |
| Qg - Gate Charge | 240 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 600 W | |
| Fall Time | 28 ns | |
| Product Type | MOSFETs | |
| Rise Time | 105 ns | |
| Subcategory | Transistors | |
| Typical Turn-Off Delay Time | 65 ns | |
| Typical Turn-On Delay Time | 21 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| TARIC | 8541290000 |
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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