Reference Only
SQ3583CEV-T1_GE3
MOSFETs N- AND P-CHANNEL 20-V (D-S) MOSFET.
Datasheet
SQ3583CEV-T1_GE3 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | TSOP-6 | |
| Transistor Polarity | N-Channel, P-Channel | |
| Number of Channels | 2 Channel | |
| Vds - Drain-Source Breakdown Voltage | 20 V | |
| Id - Continuous Drain Current | 4.1 A, 4.7 A | |
| Rds On - Drain-Source Resistance | 52 mOhms, 77 mOhms | |
| Vgs - Gate-Source Voltage | 12 V | |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V | |
| Qg - Gate Charge | 3 nC, 6 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 1.67 W | |
| Channel Mode | Enhancement | |
| Configuration | Dual | |
| Fall Time | 8 ns, 20 ns | |
| Forward Transconductance - Min | 6 S, 9 S | |
| Product Type | MOSFETs | |
| Rise Time | 16 ns, 18 ns | |
| Series | TSOP-6 Dual | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel, 1 P-Channel | |
| Typical Turn-Off Delay Time | 19 ns, 30 ns | |
| Typical Turn-On Delay Time | 10 ns, 11 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Lead Time: 26 Weeks
Quantity
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Unit Price
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Ext. Price
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Each
(Minimum: 3,000 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $0.231 | $693.00 | |
| $0.181 | $1,086.00 |
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