Reference Only

SISS32LDN-T1-BE3

MOSFETs .

Manufacturer:

Mfr Part:
SISS32LDN-T1-BE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8S
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current63 A
Rds On - Drain-Source Resistance7.2 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge37.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation65.7 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time6 ns
Forward Transconductance - Min55 S
Product TypeMOSFETs
Rise Time6 ns
SeriesSISS
SubcategoryTransistors
Transistor TypeTrenchFET Gen IV Power MOSFET
Typical Turn-Off Delay Time28 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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