Reference Only

SISS30LDN-T1-UE3

MOSFETs N-Channel 80 V (D-S) MOSFET 150 C 8.5 m 10V 12.2 m 4.5V.

Manufacturer:

Mfr Part:
SISS30LDN-T1-UE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current55.5 A
Rds On - Drain-Source Resistance8.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge32.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation57 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time8 ns
Forward Transconductance - Min37 S
Product TypeMOSFETs
Rise Time25 ns
SeriesSISS
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time28 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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