Reference Only

SISHA10DN-T1-GE3

MOSFETs .

Manufacturer:

Mfr Part:
SISHA10DN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance3.7 mOhms
Vgs - Gate-Source Voltage- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.1 V
Qg - Gate Charge34 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation39 W
Channel ModeEnhancement
TradenamePowerPAK
PackagingReel
ConfigurationSingle
Fall Time10 ns
Forward Transconductance - Min52 S
Product TypeMOSFETs
Rise Time10 ns
SeriesSISH
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Available For Backorder
Lead Time: 11 Weeks
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$0.418$2,508.00
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