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SISF12EDN-T1-GE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SISF12EDN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK 1212-8SCD
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage12 V
Id - Continuous Drain Current109 A
Rds On - Drain-Source Resistance3.6 mOhms
Vgs - Gate-Source Voltage8 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge45.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation69.4 W
Channel ModeEnhancement
ConfigurationDual
Fall Time45 ns
Forward Transconductance - Min75 S
Product TypeMOSFETs
Rise Time197 ns
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 36 Weeks
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