Reference Only

SIS4604DN-T1-GE3

MOSFETs .

Manufacturer:

Mfr Part:
SIS4604DN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current14.6 A
Rds On - Drain-Source Resistance12.4 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge11.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation3.6 W
PackagingReel
Fall Time10 ns
Product TypeMOSFETs
Rise Time10 ns
SeriesSIS
SubcategoryTransistors
Typical Turn-Off Delay Time5 ns
Typical Turn-On Delay Time5 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 4 Weeks
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Reel

(Minimum: 6,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.394$2,364.00
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