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SIR582DP-T1-BE3

MOSFETs N-Channel 80 V (D-S) MOSFET 150 C 3.4 m 10V.

Manufacturer:

Mfr Part:
SIR582DP-T1-BE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current93 A
Rds On - Drain-Source Resistance3.4 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge44.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation92.5 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time12 ns
Forward Transconductance - Min42 S
Product TypeMOSFETs
Rise Time18 ns
SeriesSiR582DP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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