SIR5802DP-T1-RE3-X Vishay

SIR5802DP-T1-RE3-X

MOSFETs

Manufacturer:

Mfr Part:
SIR5802DP-T1-RE3-X

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current137.5 A
Rds On - Drain-Source Resistance2.9 mOhms
Vgs - Gate-Source Voltage- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge28 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
TradenamePowerPAK
Fall Time12 ns
Forward Transconductance - Min49 S
Product TypeMOSFETs
Rise Time11 ns
SubcategoryTransistors
Typical Turn-Off Delay Time25 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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