Reference Only

SIR500DP-T1-UE3

MOSFETs N-Channel 30 V (D-S) MOSFET 150 C 4.7 m 10V 6.8 m 4.5V.

Manufacturer:

Mfr Part:
SIR500DP-T1-UE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current350.8 A
Rds On - Drain-Source Resistance470 uOhms
Vgs - Gate-Source Voltage- 12 V, 16 V
Vgs th - Gate-Source Threshold Voltage2.2 V
Qg - Gate Charge120 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation104.1 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min210 S
Product TypeMOSFETs
Rise Time102 ns
SeriesSiR500DP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time47 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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