SIHR080N60E-T1-GE3-X Vishay

SIHR080N60E-T1-GE3-X

MOSFETs

Manufacturer:

Mfr Part:
SIHR080N60E-T1-GE3-X

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / Case8 x 8LR
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current51 A
Rds On - Drain-Source Resistance74 mOhms
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge42 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation500 W
TradenamePowerPAK
Product TypeMOSFETs
Rise Time96 ns
SeriesE
SubcategoryTransistors
Typical Turn-Off Delay Time37 ns
Typical Turn-On Delay Time31 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Each

Pricing not available for this package type
Need pricing?
Available Regional Inventory
50 available now at ttieurope.com