Reference Only

SIHJ8N60E-T1-GE3

MOSFETs 600V Vds 30V Vgs PowerPAK SO-8L.

Manufacturer:

Mfr Part:
SIHJ8N60E-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current8 A
Rds On - Drain-Source Resistance450 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge22 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation89 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time14 ns
Product TypeMOSFETs
Rise Time15 ns
SeriesSIHJ E
SubcategoryTransistors
Typical Turn-Off Delay Time29 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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