Reference Only

SIHJ240N60E-T2-GE3

MOSFETs .

Manufacturer:

Mfr Part:
SIHJ240N60E-T2-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK SO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance240 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge15 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation89 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time14 ns
Forward Transconductance - Min4 S
Product TypeMOSFETs
Rise Time14 ns
SeriesSIHJ E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26 ns
Typical Turn-On Delay Time15 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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$1.50$9,000.00
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