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SIHG125N65E-GE3

MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V.

Manufacturer:

Mfr Part:
SIHG125N65E-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247AC-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current27 A
Rds On - Drain-Source Resistance120 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge38 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation208 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time26 ns
Forward Transconductance - Min11 S
Product TypeMOSFETs
SeriesSIHG E
SubcategoryTransistors
Transistor TypeN-Channel Power MOSFET
Typical Turn-Off Delay Time46 ns
Typical Turn-On Delay Time26 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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