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SIHG055N65E-GE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SIHG055N65E-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247AC-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current47 A
Rds On - Drain-Source Resistance58 mOhms
Vgs - Gate-Source Voltage30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge108 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation312 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time64 ns
Forward Transconductance - Min19 S
Product TypeMOSFETs
Rise Time102 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time124 ns
Typical Turn-On Delay Time70 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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$3.99$3,990.00
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