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SIEH3114EW-T1-GE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SIEH3114EW-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current267 A
Rds On - Drain-Source Resistance2.55 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge95 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation471 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time37 ns
Forward Transconductance - Min115 S
Product TypeMOSFETs
Rise Time53 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time88 ns
Typical Turn-On Delay Time16 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 52 Weeks
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$2.44$14,640.00
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