Reference Only

SIDR608EP-T1-RE3

MOSFETs N-CHANNEL 45-V (D-S) 175C MOSFET.

Manufacturer:

Mfr Part:
SIDR608EP-T1-RE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK SO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current228 A
Rds On - Drain-Source Resistance1.36 mOhms
Vgs - Gate-Source Voltage- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.3 V
Qg - Gate Charge167 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation125 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time25 ns
Forward Transconductance - Min120 S
Product TypeMOSFETs
Rise Time86 ns
SeriesSIDR
SubcategoryTransistors
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time52 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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