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SIDR4612LEP-T1-RE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SIDR4612LEP-T1-RE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current235 A
Rds On - Drain-Source Resistance1.35 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge110 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation150 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min104 S
Product TypeMOSFETs
Rise Time170 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time55 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 52 Weeks
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