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SI7913BDN-T1-GE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SI7913BDN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityP-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current6 A
Rds On - Drain-Source Resistance25.5 mOhms
Vgs - Gate-Source Voltage8 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge34.8 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation19.8 W
Channel ModeEnhancement
ConfigurationDual
Fall Time40 ns
Forward Transconductance - Min30 S
Product TypeMOSFETs
Rise Time30 ns
SubcategoryTransistors
Transistor Type2 P-Channel
Typical Turn-Off Delay Time115 ns
Typical Turn-On Delay Time25 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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