Reference Only

SI7820DN-T1-GE3

MOSFETs 200V Vds 20V Vgs PowerPAK 1212-8.

Manufacturer:

Mfr Part:
SI7820DN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current1.7 A
Rds On - Drain-Source Resistance240 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge12.1 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.5 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time17 ns
Forward Transconductance - Min8 S
Product TypeMOSFETs
Rise Time12 ns
SeriesSI7
SubcategoryTransistors
Transistor Type1 N Channel
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time11 ns
Part # AliasesSI7820DN-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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$0.86$5,160.00
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